Effect of palladium incorportaion on electrical properties of ZnO

P. MITRA

Department of Physics, The University of Burdwan, Golapbag, Burdwan - 713 104 (India).

Received on August 08, 2009 and accepted on October 15, 2009

ABSTRACT

The electrical characteristic of palladium incorporated zinc oxide thin film was carried out by monitoring the variation of electrical resistance with temperature (T) in the temperature range 300-480K. It was observed that Pd doping increases the resistance and also increases the low temperature activation barrier value to ~0.43 eV compared to ~0.3 eV for undoped ZnO films.

Keywords : ZnO, Pd doping, activation barrier.