eng Oriental Scientific Publishing Company Material Science Research India 0973-3469 2014-12-30 11 2 90 97 941 article Diffusion in Semiconductors by Using Fourier Series Expansion Technique M.K. El-Adawi 1 S. E. S. Abdel-Ghany 2 S. A. Shalaby 1 Physics Department Faculty of Education, Ain Shams university,Helioplis, Cairo Physics Department Faculty of Science , Benha university,Benha, Eygypt

Doping by diffusion is still one of acceptable and important methods that have essential technological applications. A theoretical approach to study diffusion in semi-conductors is introduced. The diffusion equation together with Fick's law and mass balance equation are solved to obtain the concentration function and the mass penetration depth using Fourier Series expansion technique. Doping of indium, phosphorus, gallium and Arsenic in Silicon as illustrative examples are given.

 https://www.materialsciencejournal.org/vol11no2/diffusion-in-semiconductors-by-using-fourier-series-expansion-technique/ Mass –energy transfer Diffusion of indium into Silicon Diffusion of phosphorus into Diffusion of Arsenic into Silicon Diffusion of gallium into Silicon