In this study, directional freezing technique was employed to prepare pure gallium antimonide (GaSb) compound and purified samples were also been characterized to ascertain their and purity level and crystalline quality.  The select impurities that were targeted for reduction include Al, Ca, Mg, Sb, Si, Sn, Ge,  Cu, Fe, Zn and Ag.  Controlled melting and freezing conditions were followed to homogenize the sample. A multi-pass directional freezing experiment on the pre-homogenized GaSb sample was conducted. The experimental conditions and parameters such as temperature gradient, sample tube movement rate, crucible geometry was established and optimized. The prepared homogenous GaSb sample was cleaned under contamination controlled conditions aided by 1000 class clean room and 100 class clean benches.  Then the homogenous sample was loaded in the high quality quartz ampoule for further purification process.  The sample containing ampoule was subjected to melting-freezing scheme with 20 passes cycle and the 4N+ pure GaSb crystalline ingot thus prepared. The purified and crystallised sample was characterized for its purity employing ICP-MS and crystalline quality through XRD techniques respectively and the  results are discussed.