The temperature distribution profile above the graphite die used to grow multi-crystalline silicon (Si) sheets by Capillary Action Shaping Technique (CAST) in a resistive heated system, has been controlled by forced argon (Ar) gas cooling. A theoretical model is proposed in which the temperature on the top of the die is related with the gas flow and the solutions to these equations are simulated and plotted using Mathematica 6.0 program. While the crystal growth is better controlled with the forced cooling, the theoretical model helps to set the optimum flow rates for obtaining desired growth speed and thickness of the Si sheets. Thus the experimental growth variables such as thickness and growth rates of the growing silicon sheets have been controlled. Temperature gradient values at the growth interface observed experimentally have also been compared to the theoretical values, which agree closely.