The alloy Ge₁₀Se₂₀ Bi₈₀ has been prepared. Thin films of Ge₁₀Se₂₀ Bi₈₀ has been prepared via a thermal evaporation method (melt quenching technique) with 3000A thickness, and rate of deposition (4.1) A/sec at pressure 2x10-⁵ Torr. The A.C electrical conductivity of a- thin films Ge₁₀Se₂₀ Bi₈₀ has been studied as a function of frequency for annealing temperature within the range (423-623) K, the deduced exponent s values, was found to decrease with increasing of annealing temperature through the frequency of the range (10²-10⁶) Hz. It was found that, the correlated barrier hopping (CBH) is the dominant conduction mechanism. Values of dielectric constant ε₁ and dielectric loss ε₂ were found to decrease with frequency and increase with temperature. The activation energies have been calculated for the annealed thin films.