eng Oriental Scientific Publishing Company Material Science Research India 0973-3469 2018-12-25 15 3 218 223 9625 article Electrical and Photoluminescence Properties of Mo- doped ZnO Films Deposited by Spray Pyrolysis T. SreenivasuluReddy 1 G. PhaneendraReddy 2 K.T. Ramakrishna Reddy 2 Department of Physics, Sir Vishveshwaraiah Institute of Science and Technology, Madanapalle, India. Solar Photovoltaic Laboratory, Department of Physics,Sri Venkateswara University, Tirupati-517 502, India.

Spray deposited Mo-doped zinc oxide (MZO) films were grown on glass substrates at different substrate temperatures (Ts)that varied in the range of 300°C-450 °C at aconstant Mo-doping concentration of 2 at. %.XRD spectra revealed better crystallinity of films prepared atTs400 °C. FTIR spectra showed the vibrational modes related toZn–O bonding.Photoluminescence spectra of MZO films showed a peakrelated toviolet emissionsbetween 400 nm and 420 nm. Electrical analysis showed n type semiconducting nature of the films and the films grown at Ts= 400 °C hadlow resistivity and high mobility.Adetailed analysis on theeffect of substrate temperatureon photoluminescence and electrical propertiesof MZO films wasdiscussed and reported.

 https://www.materialsciencejournal.org/vol15no3/electrical-and-photoluminescence-properties-of-mo-doped-zno-films-deposited-by-spray-pyrolysis/ FTIR Hall Effect Measurements Photoluminescence Spray pyrolysis Thin films XRD