Investigation of switching effect GaSe shows that the parameters are sensitive to temperature, light intensity and sample thickness. The specimen under test showd thershold field of the swtiching being (0.25 ? 103 V/cm) at room temperature. The switiching process takes place with both polarities on the crystal and has symmetrical shapes. The memory state persists if the suddenly, the specimen returns to the high resistance state, Ga Se with such properties can be used as switching elements in the electronic devices