Analysis of carrier transport while moving through GaN multiple quantum well has been carried out through phonon scattering using Fermi Golden rule. Hole capture in a Gallium Nitride quantum wells has been carried out with hole-optical phonon scattering mechanism using semi-classical approach. Our analysis show that the hole capture time vary as a function of the excess energy, quantum well width, barrier width and aluminum (Al) mole fraction in the barrier layer. Strong dependence of hole capture time on mole fraction x in the barrier layer of AlxGa1-xN has been attributed to the variation of energy and barrier height. The form factor varies in an oscillatory manner with the change in energy.