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  <record>
    <language>eng</language>
    
      <publisher>Oriental Scientific Publishing Company</publisher>
    
    <journalTitle>Material Science Research India</journalTitle>
    
      <issn>0973-3469</issn>
    
    
    <publicationDate>2008-11-09</publicationDate>
    

        <volume>5</volume>

        <issue>2</issue>

 

    <startPage>447</startPage>
    <endPage>452</endPage>

   
      <doi></doi>
    
    <publisherRecordId>2084</publisherRecordId>
    <documentType>article</documentType>
    <title language="eng">Preparation of Zns Thin Film by Silar</title>

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    <abstract language="eng"><p>Polycrystalline zinc sulphide (ZnS) thin film was synthesized using chemical bath deposition (CBD) technique. The films are phase pure and polycrystalline with crystallite size approximately 12 nm. The crystallite size was measured using X-ray line broadening method. The electrical characterization was carried out using conventional DC two-probe technique. An activation energy barrier value of 0.60 eV was observed, which can be associated with deep acceptor levels due to excess zinc atoms.</p></abstract>

    <fullTextUrl format="html">https://www.materialsciencejournal.org/vol5no2/preparation-of-zns-thin-film-by-silar/</fullTextUrl>




      <keywords language="eng">
        <keyword> Zinc sulphide</keyword>
      </keywords>


      <keywords language="eng">
        <keyword> polycrystalline thin film</keyword>
      </keywords>


      <keywords language="eng">
        <keyword> CBD</keyword>
      </keywords>

  </record>

</records>