The Indium doped ZnSe thin films have been electrosynthesized at – 0.800 V vs SCE on titanium substrate at room temperature. The preparation of these films have been carried out by electro-chemical co-deposition method using limiting current. The polarization techniques were used to study the corrosion characteristics of these films. The capacitance measurements were also carried out to determine charge carrier density. These films were studied to investigate the effect of indium concentration on the composition, capacitance & corrosion parameters of the In containing ZnSe thin films.