The electrical, photoelectric and other properties of compound semiconductor are highly structure sensitive as they influence the device performance. The structural parameters are strongly dependent on composition and other related properties. In this paper, we report the study of structural parameters of (CdSe)1-x(ZnS)x like crystallinity, crystal phase, lattice constant, average internal stress, strain, grain size etc. XRD, SEM, EDAX techniques were used for the characterization of the compound.