eng Oriental Scientific Publishing Company Material Science Research India 0973-3469 2010-02-20 7 2 495 498 2432 article Thickness Dependent Electrical Characterization of Electron Beam Evaporated N-Type Cdse Thin Films S.R. Vishwakarma 1 Aneet Kumar Verma 1 Ravishankar Nath Tripathi 1 Rahul 1 Department of Physics and Electronics, Dr. R.M.L. Avadh University, Faizabad, India.

The prepared starting materials has composition Cd0.60Se0.40 was used to fabrication of thin films. Cadmium selenide thin films of different thickness (400nm-700nm) deposited by electron beam evaporation technique on well cleaned glass substrate at substrate temperature 300 K. The X-ray diffraction pattern confirmed that the prepared thin films of composition Cd 0.60Se 0.40 has polycrystalline in nature. The resistivity, conductivity, Hall mobility, carrier concentration of the deposited films were calculated of different films thickness..

 https://www.materialsciencejournal.org/vol7no2/thickness-dependent-electrical-characterization-of-electron-beam-evaporated-n-type-cdse-thin-films/ n-type CdSe resistivity Hall mobility Hall coefficient carrier concentration