eng Oriental Scientific Publishing Company Material Science Research India 0973-3469 2015-05-27 8 1 197 200 2581 article Preparation of Zno Film on P-Si Substrate by Silar and Heterojunction Characteristics of P-Si/N-Zno P. Mitra 1 Department of Physics, The University of Burdwan, Golapbag, Burdwan - 713104, India.

Zinc oxide (ZnO) thin films was deposited on p-silicon (Si) substrate from ammonium zincate bath following a chemical dipping technique called SILAR. Structural characterization by X-ray diffraction (XRD) indicates the formation of polycrystalline single phase ZnO with strong c-axis orientation. I-V characteristic of the p-Si/n-ZnO heterojunction was studied and rectification was observed. The maximum value of forward to reverse current ratio at room temperature was ~15 at 3.0 V. It increases to ~30 at 100oC.

 https://www.materialsciencejournal.org/vol8no1/preparation-of-zno-film-on-p-si-substrate-by-silar-and-heterojunction-characteristics-of-p-sin-zno/ p-Si/n-ZnO heterojunction C-axis orientation I-V characteristics