Depth Profiling of Aluminium Diffused in Silicon by Activation Analysis With 14 Mev Neutrons

eng Oriental Scientific Publishing Company Material Science Research India 0973-3469 2011-12-10 8 2 357 359 2694 article Depth Profiling of Aluminium Diffused in Silicon by Activation Analysis With 14 Mev Neutrons Ranjita Mandal 1,2 V. N. Bhoraskar 2 D. Sengupta 1 Department of Geology and Geophysics, I.I.T., Kharagpur - 721 302, India. Department of Physics, University of Poona, Pune - 411 007, India.

Here the technique of Activation analysis with 14MeV neutrons was used to know the depth profile of Aluminium in samples of p-type Silicon rubbed with Alumina and baked at high temperature(800^oC). Chemical etching was done to remove layers and find the depth.

https://www.materialsciencejournal.org/vol8no2/depth-profiling-of-aluminium-diffused-in-silicon-by-activation-analysis-with-14-mev-neutrons/ Semiconductors Silicon Aluminium Depth profile 14 MeV neutrons Activation analysis.