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  <record>
    <language>eng</language>
    
      <publisher>Oriental Scientific Publishing Company</publisher>
    
    <journalTitle>Material Science Research India</journalTitle>
    
      <issn>0973-3469</issn>
    
    
    <publicationDate>2012-06-20</publicationDate>
    

        <volume>9</volume>

        <issue>1</issue>

 

    <startPage>23</startPage>
    <endPage>30</endPage>

   
      <doi></doi>
    
    <publisherRecordId>1150</publisherRecordId>
    <documentType>article</documentType>
    <title language="eng">Electrical Conductivity, TEP and Mobility of (CdSe)1-x(ZnS)x Mixed Semiconductors</title>

    <authors>
	 


      <author>
       <name>K. Yadaiah</name>

 
		

	<affiliationId>1</affiliationId>
      </author>
    


	 


      <author>
       <name>J.Krishnaiah</name>


		

	<affiliationId>1</affiliationId>

      </author>
    


	 


      <author>
       <name>Vasudeva Reddy</name>

		

	<affiliationId>2</affiliationId>
      </author>
    


	 


      <author>
       <name>M. Nagabushanam</name>

		

	<affiliationId>2</affiliationId>
      </author>
    



	



	

    </authors>
    
	    <affiliationsList>
	    
		

		<affiliationName affiliationId="1">Sri Venkateswara College (U.G. and P.G.), Suryapet - 508 213 (India).</affiliationName>
    


		

		<affiliationName affiliationId="2">Department of Physics, Osmania University, Hyderabad - 500 007 (India).</affiliationName>
    

		

		

		

		

	  </affiliationsList>







    <abstract language="eng"><p>The Polycrystalline (CdSe)1-x(ZnS)x semiconductor powder with 0&lt;=x&lt;=1 was prepared by controlled co-precipitation method. Pellets made out of the powder, sintered at 800o C in nitrogen atmosphere was used for studies. Electrical conductivity of these samples increased with increasing the temperature from 77-300o K. At a given temperature an increase in conductivity with the increase in composition was observed in samples with x = 0.2 to 0.4 where as decrease in conductivity with the increase in composition occurs in samples with x = 0.7 to 1. For all samples, activation energies were calculated from the linear portions of log s vs 1000/T and the values range between 0.021 eV to 0.042 eV measurements of all samples are found to be negative, indicating n-type conduction in temperature region 77-300oK.From TEP and conductivity studies, carrier concentration and their mobilities were deduced and all the results were reported and suitable reasons were attributed for each observation made.</p></abstract>

    <fullTextUrl format="html">https://www.materialsciencejournal.org/vol9no1/electrical-conductivity-tep-and-mobility-of-cdse1-xznsx-mixed-semiconductors/</fullTextUrl>




      <keywords language="eng">
        <keyword> Electrical Conductivity</keyword>
      </keywords>


      <keywords language="eng">
        <keyword> Thermo Electric Power</keyword>
      </keywords>


      <keywords language="eng">
        <keyword> Charge Carrier Concentration</keyword>
      </keywords>


      <keywords language="eng">
        <keyword> Mobility</keyword>
      </keywords>

  </record>

</records>