Structural Parameters of (Cdse)1-X(Zns)X Mixed Semiconductors

Abstract
Keywords
Introduction
Materials and Methods
Results
Discussion
Conclusion
Acknowledgement
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Conflict of Interest
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Article | Open Access

Structural Parameters of (Cdse)1-X(Zns)X Mixed Semiconductors

Volume 6, Number 2

K. Yadaiah¹, K. Hadasa, G. Yellaiah¹, E. Nagabhushan² and M. Nagabhushanam³

¹Department of Physics, S.V. College, Suryapet - 508 213 (India).

²Department of Materials Science, University College of Technology, Osmania University, Hyderabad - 500 007 (India).

³Department of Physics, University College of Science, Osmania University, Hyderabad - 500 007 (India).

DOI : http://dx.doi.org/10.13005/msri/060204

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ABSTRACT:

The electrical, photoelectric and other properties of compound semiconductor are highly structure sensitive as they influence the device performance. The structural parameters are strongly dependent on composition and other related properties. In this paper, we report the study of structural parameters of (CdSe)1-x(ZnS)x like crystallinity, crystal phase, lattice constant, average internal stress, strain, grain size etc. XRD, SEM, EDAX techniques were used for the characterization of the compound.

KEYWORDS:

Mixed semiconductors; Co-precipitation; X-ray and optical characterization; Lattice parameters

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