Ultra High Purity Gallium and Indium for Emerging Iii-V Epitaxial Nanoelectronics Materials Technologies: An Overview

DOI : http://dx.doi.org/10.13005/msri/032a10

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The epitaxial fabrication and assembly of GaAs, GaN, AlN nanostructures into quantum wells and quantum dots based devices and integration into larger scale structures has been the topic of most recent technological developments. Gallium and indium based III-V binary, ternary and quaternary multi-layered structures and devices play a vital role in satellites, super computers, surveillance systems, proximity sensors, because they can send and process information about five times faster, withstand high radiation dosage and operate at higher temperatures and frequencies compared to silicon based devices. This paper, describes our efforts of developing high pure gallium and indium metals, which are required for nano electronics and optoelectronics and specifically in the fabrication and assembly of GaAs, GaN, AlN nanostructures into quantum wells and quantum dots based devices. In this presentation principles and techniques associated with the purification and purity analysis characterization of gallium and indium and also the current trend and future prospects are covered. Results pertaining to the segregation characteristics of metallic impurities associated with gallium and indium metals will be discussed in detail.

Ultra high purity; Gallium; indium; Nanoelectronic