I – Vt and C – V Characteristics of n – GaN – Metal Contact Devices

DOI : http://dx.doi.org/10.13005/msri/040101

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Gallium nitride (GaN) is a next-generation semiconductor material with excellent potential for a range of technological application ,extending beyond the possibilities of established materials such as Si and GaAs. GaN is a wide band gap emiconductor making it well suited to blue/ violet light-emitting diodes, lasers and optical detectors, valuable for a range of application including wide bandwidth optical communications, high-density data storage, and energy-efficient generation of natural white light. Its wide band gap and high chemical stability also offer the prospect of high temperature electronic devices, of particular interest for down-hole instrumentation in the oil and gas industry and elsewhere. High saturated drift velocity and high thermal conductivity are valuable for high power switches for traction motor control,and devices for microwave generation .Tremendous amount of research activity is taking place world wide in fabricating and characterizing devices made from III-Nitrides and their alloys.We have carried out the current-voltage measurements and obtained clear rectifing junction for the case of GaN-Au ,while the system of Al-GaN-Al showed omic characteristics .Doping concentration and barrier height have been determined from the capacitance-voltage measurements.

Metal - semiconductor; I-V characteristic; temperature