Green and Blue Emission from Stain-Etched Porous Silicon


R. K. Tyagi1 and Pankaj Pathak2

1Department of Physics, Government (P.G.) College, Khatima, U.S.Nagar (India).

2Department of Physics, S.S.V. (P.G.) College, Hapur, Gaziabad (India).

DOI : http://dx.doi.org/10.13005/msri/040236

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ABSTRACT:

Visible light emission is reported from boron doped p+ type porous silicon films. These films were prepared by stain etched method. In this method KOH pallets were used in de-ionized water at 75?C for etching silicon samples. Blue and green light area observed from these porous silicon samples. The visible photoluminescence originates from direct transitions between energy levels in the quantum wells.

KEYWORDS:

Porous silicon(PC); photoluminescence (PL); Quantum Wells; quantum wires; stain-etching

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Article Publishing History
Received on: 20 Sep 2007
Accepted on: 4 Dec 2007


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ISSN

Print: 0973-3469, Online: 2394-0565


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