Memory-Switching Effect in Gase Single Crystals

Abstract
Keywords
Introduction
Materials and Methods
Results
Discussion
Conclusion
Acknowledgement
Funding Sources
Conflict of Interest
Data Availability Statement
Ethics Statement
References

Article | Open Access

Memory-Switching Effect in Gase Single Crystals

Volume 2, Number 2

A. A. Al-Ghamdi¹*, S. A. Hussein² and M. M. Nassary²

¹Department of Phyics, Faculty of Science, King Abdul Aziz University Jeddah (Saudia Arabia)

²Physics Department, Faculty of Science, South Valley University, Qena (Egypt)

DOI : http://dx.doi.org/10.13005/msri/020210

Download this article as:

ABSTRACT:

Investigation of switching effect GaSe shows that the parameters are sensitive to temperature, light intensity and sample thickness. The specimen under test showd thershold field of the swtiching being (0.25 ? 103 V/cm) at room temperature. The switiching process takes place with both polarities on the crystal and has symmetrical shapes. The memory state persists if the suddenly, the specimen returns to the high resistance state, Ga Se with such properties can be used as switching elements in the electronic devices

KEYWORDS:

GaSe; Single crystals; Memory-switching effect

Article Metrics