Article | Open Access

Effect of Palladium Incorportaion on Electrical Properties of Zno

Volume 6, Number 2

P. Mitra

Department of Physics, The University of Burdwan, Golapbag, Burdwan - 713 104 (India).

DOI : http://dx.doi.org/10.13005/msri/060226

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ABSTRACT:

The electrical characteristic of palladium incorporated zinc oxide thin film was carried out by monitoring the variation of electrical resistance with temperature (T) in the temperature range 300-480K. It was observed that Pd doping increases the resistance and also increases the low temperature activation barrier value to ~0.43 eV compared to ~0.3 eV for undoped ZnO films.

KEYWORDS:

ZnO; Pd doping; activation barrier

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Article Publishing History

Received on: 8 Aug 2009
Accepted on: 15 Oct 2009

ISSN

Print: 0973-3469, Online: 2394-0565

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