Preparation of Nanocrystalline Sns Thin Film By Silar

S. Mondal and P. Mitra*

Department of Physics, The University of Burdwan, Golapbag, Burdwan - 713104 (India)

DOI : http://dx.doi.org/10.13005/msri/050109

ABSTRACT:

Nanocrystalline tin sulphide (SnS) thin films has been synthesized using successive ionic layer adsorption and reaction (SILAR) technique. The films are phase pure and polycrystalline with crystallite size approximately ranging between 8-11 nm. The crystallite size was measured using X-ray line broadening method. The variation of structural property with increasing thickness has been studied. Complete oxidation to tin oxide was found due to heat treatment at 400oC for one hour. The electrical characterization was carried out using conventional DC two-probe technique. An activation energy barrier value of 0.28 eV was observed, which can be associated with deep acceptor levels due to excess tin atoms.

KEYWORDS: Tin sulphide; nanocrystallin thin film; SILAR

Copy the following to cite this article: Mondal S, Mitra* P. Preparation of Nanocrystalline Sns Thin Film by Silar. Mat.Sci.Res.India;5(1)

Copy the following to cite this URL: Mondal S, Mitra* P. Preparation of Nanocrystalline Sns Thin Film by Silar. Mat.Sci.Res.India;5(1). Available from: http://www.materialsciencejournal.org/?p=1891

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