Preparation of Zns Thin Film by Silar

S. Datta Roy and P. Mitra*

Department of Physics, The University of Burdwan Golapbag, Burdwan - 713 104 (India).

DOI : http://dx.doi.org/10.13005/msri/050227

ABSTRACT:

Polycrystalline zinc sulphide (ZnS) thin film was synthesized using chemical bath deposition (CBD) technique. The films are phase pure and polycrystalline with crystallite size approximately 12 nm. The crystallite size was measured using X-ray line broadening method. The electrical characterization was carried out using conventional DC two-probe technique. An activation energy barrier value of 0.60 eV was observed, which can be associated with deep acceptor levels due to excess zinc atoms.

KEYWORDS: Zinc sulphide; polycrystalline thin film; CBD

Copy the following to cite this article: Roy S. D, Mitra P. Preparation of Zns Thin Film by Silar. Mat.Sci.Res.India;5(2)

Copy the following to cite this URL: Roy S. D, Mitra P. Preparation of Zns Thin Film by Silar. Mat.Sci.Res.India;5(2). Available from: http://www.materialsciencejournal.org/?p=2084

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